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Dirac fermions and flat bands in the ideal kagome metal FeSn

Authors :
Massachusetts Institute of Technology. Department of Physics
Kang, Mingu
Ye, Linda
Fang, Shiang
You, Jhih-Shih
Levitan, Abraham
Han, Minyong
Facio, Jorge I
Jozwiak, Chris
Bostwick, Aaron
Rotenberg, Eli
Chan, Mun K
McDonald, Ross D
Graf, David
Kaznatcheev, Konstantine
Vescovo, Elio
Bell, David C
Kaxiras, Efthimios
van den Brink, Jeroen
Richter, Manuel
Prasad Ghimire, Madhav
Checkelsky, Joseph
Comin, Riccardo
Massachusetts Institute of Technology. Department of Physics
Kang, Mingu
Ye, Linda
Fang, Shiang
You, Jhih-Shih
Levitan, Abraham
Han, Minyong
Facio, Jorge I
Jozwiak, Chris
Bostwick, Aaron
Rotenberg, Eli
Chan, Mun K
McDonald, Ross D
Graf, David
Kaznatcheev, Konstantine
Vescovo, Elio
Bell, David C
Kaxiras, Efthimios
van den Brink, Jeroen
Richter, Manuel
Prasad Ghimire, Madhav
Checkelsky, Joseph
Comin, Riccardo
Source :
arXiv
Publication Year :
2020

Abstract

A kagome lattice of 3d transition metal ions is a versatile platform for correlated topological phases hosting symmetry-protected electronic excitations and magnetic ground states. However, the paradigmatic states of the idealized two-dimensional kagome lattice—Dirac fermions and flat bands—have not been simultaneously observed. Here, we use angle-resolved photoemission spectroscopy and de Haas–van Alphen quantum oscillations to reveal coexisting surface and bulk Dirac fermions as well as flat bands in the antiferromagnetic kagome metal FeSn, which has spatially decoupled kagome planes. Our band structure calculations and matrix element simulations demonstrate that the bulk Dirac bands arise from in-plane localized Fe-3d orbitals, and evidence that the coexisting Dirac surface state realizes a rare example of fully spin-polarized two-dimensional Dirac fermions due to spin-layer locking in FeSn. The prospect to harness these prototypical excitations in a kagome lattice is a frontier of great promise at the confluence of topology, magnetism and strongly correlated physics.

Details

Database :
OAIster
Journal :
arXiv
Notes :
application/pdf, English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1239993805
Document Type :
Electronic Resource