Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications

Authors :: Cho, C. R.
Park, S. H.
Moon, B. M.
Sundqvist, J.
Harsta, A.
Grishin, Alexander M.
Cho, C. R.
Park, S. H.
Moon, B. M.
Sundqvist, J.
Harsta, A.
Grishin, Alexander M.
Publication Year :: 2002
Abstract: Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir20 vertical capacitor yielded remnant polarization of 12 muC/cm(2) and coercive field similar to20 kV/cm. Significant flat-band voltage V-FB shifts with buffer layer thickness in Au/NKN/SiO2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta2O5/Si structure exhibited wide memory window without significant V-FB deviations, low leakage currents, and rather long retention time at zero bias.<br />QC 20100525