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Epitaxial growth of beta-SiC on ion-beam synthesized beta-SiC : Structural characterization

Authors :
Romano-Rodriguez, A.
Perez-Rodriguez, A.
Serre, C.
Morante, J. R.
Esteve, J.
Acero, M. C.
Kögler, R.
Skorupa, W.
Östling, Mikael
Nordell, Nils
Karlsson, S.
Van Landuyt, J.
Romano-Rodriguez, A.
Perez-Rodriguez, A.
Serre, C.
Morante, J. R.
Esteve, J.
Acero, M. C.
Kögler, R.
Skorupa, W.
Östling, Mikael
Nordell, Nils
Karlsson, S.
Van Landuyt, J.
Publication Year :
2000

Abstract

In this work we present for the first time, to our knowledge, the CVD epitaxial growth of β-SiC using an ion beam synthesized (IBS) β-SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 °C. The ion beam synthesized continuous layer is constituted by β-SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.<br />QC 20150313

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1235057165
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.4028.www.scientific.net.MSF.338-342.309