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Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration
- Publication Year :
- 2006
-
Abstract
- Wafer-level three-dimensional integration (3D) is an emerging technology to increase the performance and functionality of integrated circuits (ICs), with adhesive wafer bonding a key step in one of the attractive technology platforms. In such an application, the dielectric adhesive layer needs to be very uniform, and precise wafer-to-wafer alignment accuracy (similar to 1 mu m) of the bonded wafers is required. In this paper we present a new adhesive wafer bonding process that involves partially curing (cross-linking) of the benzocyclobutene (BCB) coatings prior to bonding. The partially cured BCB layer essentially does not reflow during bonding, minimizing the impact of inhomogeneities in BCB reflow under compression and/or any shear forces at the bonding interface. The resultant nonuniformity of the BCB layer thickness after wafer bonding is less than 1% of the average layer thickness, and the wafers shift relative to each other during the wafer bonding process less than 1 mu m (average) for 200 mm diameter wafers. When bonding two silicon wafers using partially cured BCB, the critical adhesion energy is sufficiently high (>= 14 J/m(2)) for subsequent IC processing.<br />QC 20100525
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1235035977
- Document Type :
- Electronic Resource
- Full Text :
- https://doi.org/10.1149.1.2168409