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Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth

Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth

Authors :
Omanakuttan, Giriprasanth
Martinez Sacristan, Oscar
Marcinkevičius, Saulius
UŽdavinys, Tomas Kristijonas
Jimenez, Juan
Ali, Hasan
Leifer, Klaus
Lourdudoss, Sebastian
Sun, Yan-Ting
Omanakuttan, Giriprasanth
Martinez Sacristan, Oscar
Marcinkevičius, Saulius
UŽdavinys, Tomas Kristijonas
Jimenez, Juan
Ali, Hasan
Leifer, Klaus
Lourdudoss, Sebastian
Sun, Yan-Ting
Publication Year :
2019

Abstract

We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement<br />QC 20190326

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1235011404
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.1364.OME.9.001488