Back to Search
Start Over
Epitaxial lateral overgrowth of GaxIn1-xP towards coherent GaxIn1-xP/Si heterojunction by hydride vapor phase epitaxy
- Publication Year :
- 2016
-
Abstract
- Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).<br />QC 20170307
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1234990652
- Document Type :
- Electronic Resource
- Full Text :
- https://doi.org/10.1109.ICIPRM.2016.7528828