Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures

Authors :: Zhang, YW
Zhang, TH
Lu, DT
Maximov, IA
Sarwe, EL
Graczyk, M
Whitlow, HJ
Zhang, YW
Zhang, TH
Lu, DT
Maximov, IA
Sarwe, EL
Graczyk, M
Whitlow, HJ
Publication Year :: 2001
Abstract: Si3N4/Si(1 0 0),SiO2/Si(1 0 0) and SiO2/Si(1 1 1) wafers were implanted by keV Co ions under technical conditions to form thin silicide surface films. A metal vapour vacuum are (MEVVA) source was employed to produce a high fluence of Co ions that was just<br />Addresses: Zhang YW, Beijing Normal Univ, Inst Low Energy Nucl Phys, Key Lab Univ Radiat Beam Technol & Mat Midificat, Beijing 100875, Peoples R China. Beijing Normal Univ, Inst Low Energy Nucl Phys, Key Lab Univ Radiat Beam Technol & Mat Midificat, Beiji

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