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Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
- Publication Year :
- 2014
-
Abstract
- The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl) yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 x 10(11) eV(-1) cm(-2) were achieved by oxygen annealing at high temperatures (550 degrees C-600 degrees C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate.<br />QC 20150109
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1234798066
- Document Type :
- Electronic Resource
- Full Text :
- https://doi.org/10.1063.1.4903533