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High dose Al + implanted and microwave annealed 4H-SiC

Authors :
Nipoti, R.
Nath, A.
Rao, M.V.
Hallén, Anders
Mancarella, F.
Zampolli, S.
Tian, Y.L.
Nipoti, R.
Nath, A.
Rao, M.V.
Hallén, Anders
Mancarella, F.
Zampolli, S.
Tian, Y.L.
Publication Year :
2012

Abstract

A post implantation microwave annealing technique has been used for the electrical activation of Al + implanted ions in semi-insulating 4H-SiC. The annealing temperatures have been 2000-2100°C. The implanted Al concentration has been varied from 5 × 10 19 to 8 × 10 20 cm -3. A minimum resistivity of 2 × 10 -2 Ω·cm and about 70% electrical activation of the implanted Al has been measured at room temperature for an implanted Al concentration of 8 × 10 20 cm -3 and a microwave annealing at 2100°C for 30s.<br />QC 20120807

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1234483825
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.4028.www.scientific.net.MSF.717-720.817