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Microhardness depth profiles of Si/SiC multi-layered structures prepared by chemical vapor deposition
- Publication Year :
- 2001
-
Abstract
- Microhardness-dcpth profiles of SilSiC Iayered structures prepared by chemical \'apour deposition are studied by indenting with the pyramids of K1100p and of Vickers. In this way it is possible to reveal strained regions resulting from the large lattice mismatch between Si and SiC
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1233739515
- Document Type :
- Electronic Resource