Considering Symmetry Properties of InP Nanowire/Light Incidence Systems to Gain Broadband Absorption

Geometrically designed III-V nanowire arrays are promising candidates for disruptive optoelectronics due to the possibility of obtaining a strongly enhanced absorption resulting from nanophotonic resonance effects. With normally incident light on such vertical nanowire arrays, the absorption spectra exhibit peaks that originate from excitation of HE1m waveguide modes in the constituent nanowires. However, the absorption spectra typically show dips between the absorption peaks. Conventionally, such weak absorption has been counteracted by either making the nanowires longer or by decreasing the pitch of the array, both alternatives effectively increasing the volume of absorbing material in the array. Here, we first study two approaches for compensating the absorption dips by exciting additional Mie resonances: 1) oblique light incidence on vertical InP nanowire arrays and 2) normal light incidence on inclined InP nanowire arrays. We then show that branched nanowires offer a novel route to achieve broadband absorption by taking advantage of simultaneous excitations of Mie resonances in the branches and guided HE1m modes in the stem. Finite element method calculations show that the absorption efficiency is enhanced from 0.72 for vertical nanowires to 0.78 for branched nanowires under normal light incidence. Our work provides new insight for the development of novel efficient photovoltaics with high efficiency and reduced active material volume.