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A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

Authors :
Hensgens, T. (author)
Mukhopadhyay, U. (author)
Barthelemy, P.J.C. (author)
Vermeulen, R.F.L. (author)
Schouten, R.N. (author)
Fallahi, S. (author)
Gardner, G. C. (author)
Reichl, C. (author)
Wegscheider, W. (author)
Manfra, M. J. (author)
Vandersypen, L.M.K. (author)
Hensgens, T. (author)
Mukhopadhyay, U. (author)
Barthelemy, P.J.C. (author)
Vermeulen, R.F.L. (author)
Schouten, R.N. (author)
Fallahi, S. (author)
Gardner, G. C. (author)
Reichl, C. (author)
Wegscheider, W. (author)
Manfra, M. J. (author)
Vandersypen, L.M.K. (author)
Publication Year :
2018

Abstract

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy provides a technique that allows one to directly probe the density of states of such two-dimensional electron systems. Here, we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.<br />Vandersypen Lab<br />QN/Quantum Transport<br />General<br />QN/Vandersypen Lab

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1182909730
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.1063.1.5046796