Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

MLA

Hofstetter, Daniel, et al. Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures. 2010. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1156675214&authtype=sso&custid=ns315887.

APA

Hofstetter, D., Baumann, E., Giorgetta, F. R., Théron, R., Wu, H., Schaff, W. J., Dawlaty, J., George, P. A., Eastman, L. F., Rana, F., Kandaswamy, P. K., Guillot, F., & Monroy, E. (2010). Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures.

Chicago

Hofstetter, Daniel, Esther Baumann, Fabrizio R. Giorgetta, Ricardo Théron, Hong Wu, William J. Schaff, Jahan Dawlaty, et al. 2010. “Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1156675214&authtype=sso&custid=ns315887.