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Preparation and characterization of tin oxide nanowires on SIC
- Source :
- Proceedings of the 14th International Conference on Micro-Sensors, Actuators and Microsystems - Transducers'07 and Eurosensors XXI
- Publication Year :
- 2007
-
Abstract
- Interest in nanowires of metal oxide oxides has been exponentially growing in the last years, due to the attracting potential of application in electronic, optical and sensor field. We have focused our attention on the sensing properties of semiconducting nanowires as conductometric and optical gas sensors. Single crystal tin dioxide nanostructures were synthesized to explore and study their capability in form of multi-nanowires sensors. The nanowires of SnO2 have been used to produce a novel gas sensor based on Pt/oxide/SiC structure and operating as Schottky diode. For the first time, a reactive oxide layer in this device has been replaced by SnO2 nanowires. Proposed sensor has maintained the advantageous properties of known SiC- based MOS devices, that can be employed for the monitoring of gases (hydrogen and hydrocarbons) emitted by industrial combustion processes.
Details
- Database :
- OAIster
- Journal :
- Proceedings of the 14th International Conference on Micro-Sensors, Actuators and Microsystems - Transducers'07 and Eurosensors XXI
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1146604052
- Document Type :
- Electronic Resource