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Effect of multi-field plates on the reverse breakdown and leakage characteristics of GaN-on-silicon HEMTs
- Source :
- Baylon
- Publication Year :
- 2018
-
Abstract
- MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. The initial developmental goals were for a three terminal structure that has a reverse breakdown characteristic of >1200 volts and is capable of switching 10 amperes of current, with a current breakdown target of 3000 volts. This paper presents an update on the progress of this multi-year development project against these on-state current handling, reverse leakage and breakdown goals.<br />United States. Air Force (Contract FA8721-05-C-0002)
Details
- Database :
- OAIster
- Journal :
- Baylon
- Notes :
- application/pdf, en_US
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1141879391
- Document Type :
- Electronic Resource