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Band offsets of n-type electron-selective contacts on cuprous oxide (Cu[subscript 2]O) for photovoltaics

Authors :
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Photovoltaic Research Laboratory
Brandt, Riley E.
Lee, Yun Seog
Buonassisi, Tonio
Young, Matthew
Park, Helen Hejin
Dameron, Arrelaine
Chua, Danny
Teeter, Glenn
Gordon, Roy G.
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Photovoltaic Research Laboratory
Brandt, Riley E.
Lee, Yun Seog
Buonassisi, Tonio
Young, Matthew
Park, Helen Hejin
Dameron, Arrelaine
Chua, Danny
Teeter, Glenn
Gordon, Roy G.
Source :
Other univ. web domain
Publication Year :
2015

Abstract

The development of cuprous oxide (Cu [subscript 2]O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu [subscript 2]O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO[subscript 2], CdS, and Ga[subscript 2]O[subscript 3]. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu [subscript 2]O; the detrimental impact of this on open-circuit voltage (V [subscript OC]) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga[subscript 2]O[subscript 3], which both demonstrate slightly positive conduction-band offsets and high V [subscript OC] potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.<br />National Science Foundation (U.S.) (CAREER Award ECCS-1150878)<br />Singapore-MIT Alliance for Research and Technology. Low Energy Electronic Systems Research Program (Singapore. National Research Foundation)<br />National Renewable Energy Laboratory (U.S.) (Non-Proprietary Partnering Program Contract DE-AC36-08-GO28308)

Details

Database :
OAIster
Journal :
Other univ. web domain
Notes :
application/pdf, en_US
Publication Type :
Electronic Resource
Accession number :
edsoai.on1141873904
Document Type :
Electronic Resource