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Investigation of mechanisms and influencing processing factors on mobility enhancement in strained Si n-MOSFETs

Authors :
Judy L. Hoyt.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Xia, Guangrui, 1976
Judy L. Hoyt.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Xia, Guangrui, 1976
Publication Year :
2014

Abstract

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.<br />Includes bibliographical references (p. 92-95).<br />by Guangrui Xia.<br />S.M.

Details

Database :
OAIster
Notes :
95 p., application/pdf, English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1140763698
Document Type :
Electronic Resource