Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique

Details

Database :

OAIster

Notes :

English

Publication Type :

Electronic Resource

Accession number :

edsoai.on1139856675

Document Type :

Electronic Resource

Full Text :

https://doi.org/10.1049.el:19911094