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ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

Authors :
Fraunhofer-Institut für Elektronische Nanosysteme ENAS
Technische Universität Chemnitz
Fudan University
Ghent University
Leibniz-Institut für Festkörper- und Werkstoffforschung IFW
Waechtler, Thomas
Ding, Shao-Feng
Hofmann, Lutz
Mothes, Robert
Xie, Qi
Oswald, Steffen
Detavernier, Christophe
Schulz, Stefan E.
Qu, Xin-Ping
Lang, Heinrich
Gessner, Thomas
Fraunhofer-Institut für Elektronische Nanosysteme ENAS
Technische Universität Chemnitz
Fudan University
Ghent University
Leibniz-Institut für Festkörper- und Werkstoffforschung IFW
Waechtler, Thomas
Ding, Shao-Feng
Hofmann, Lutz
Mothes, Robert
Xie, Qi
Oswald, Steffen
Detavernier, Christophe
Schulz, Stefan E.
Qu, Xin-Ping
Lang, Heinrich
Gessner, Thomas
Source :
Microelectronic Engineering, 88, 2011, 5, S. 684-689, DOI: 10.1016/j.mee.2010.07.004
Publication Year :
2011

Abstract

The deposition of Cu seed layers for electrochemical Cu deposition (ECD) via atomic layer deposition (ALD) of copper oxide and subsequent thermal reduction at temperatures between 110 and 120°C was studied on different diffusion barrier systems. While optimization of the process is required on TaN with respect to reduction and plating, promising results were obtained on blanket PVD Ru. The plating results on layers of ALD Cu with underlying Ru even outperformed the ones achieved on PVD Cu seed layers with respect to morphology and resistivity. Applying the processes to via and line patterns gave similar results, suggesting that a combination of ALD Cu with PVD or ALD-grown Ru could significantly improve the ECD Cu growth.

Details

Database :
OAIster
Journal :
Microelectronic Engineering, 88, 2011, 5, S. 684-689, DOI: 10.1016/j.mee.2010.07.004
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1135762105
Document Type :
Electronic Resource