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Conducting tip atomic force microscopy analysis of aluminum oxide barrier defects decorated by electrodeposition

Authors :
UCL - FSA/MAPR - Département des sciences des matériaux et des procédés
Carrey, J
Bouzehouane, K.
George, JM.
Ceneray, C
Fert, A.
Vaures, A
Kenane, Salah
Piraux, Luc
UCL - FSA/MAPR - Département des sciences des matériaux et des procédés
Carrey, J
Bouzehouane, K.
George, JM.
Ceneray, C
Fert, A.
Vaures, A
Kenane, Salah
Piraux, Luc
Source :
Applied Physics Letters, Vol. 79, no. 19, p. 3158-3160 (2001)
Publication Year :
2001

Abstract

We show that the electrodeposition of Ni80Fe20 on top of a thin aluminum oxide barrier leads to particle growth occurring on preferential nucleation centers. The particle sites are attributed to local defects in the aluminum oxide barrier. As a function of the thickness of the barrier, different growth modes can occur. For thinner barriers, new nucleation centers are created during electrodeposition. The resistance of the defects, characterized by conducting atomic force microscopy, ranges from less than 10(4) to greater than 10(12) Omega. Various I(V) characteristics were also obtained, depending on the resistance of the defect. These results suggest that this experimental technique could be a very interesting one with which to fabricate nanoconstrictions dedicated to ballistic magnetoresistance studies. (C) 2001 American Institute of Physics.

Details

Database :
OAIster
Journal :
Applied Physics Letters, Vol. 79, no. 19, p. 3158-3160 (2001)
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1130564710
Document Type :
Electronic Resource