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Ion implanted MOS transistors
- Publication Year :
- 1977
-
Abstract
- A review of the principal features of ion implanted transistors is presented. A detailed analysis of the threshold voltage shift is given, with emphasis directed towards dose and energy effects. Analytical expressions are derived for enhancement mode devices and compared with numerical solutions; the effect of the implantation on subthreshold currents is described. Some aspects of depletion mode transistors are treated.<br />Anglais
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1130543853
- Document Type :
- Electronic Resource