Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si

A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm(2), a maximum operating temperature of 80 degrees C, and a maximum 3-dB band-width of 5.8 GHz was achieved for 1.3-mu m InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by the reduced threading dislocation density (from 7 x 10(7) to 3 x 10(6) cm(-2)), and optimized probe design. The patterned Si produced antiphase domain free material in the coalesced GaAs buffer layer with reduced misfit/threading dislocation nucleation, without the use of Ge/GaP buffers or substrate miscut. Utilizing aspect ratio trapping, cyclic thermal annealing, and dislocation filter layers, high-quality III-V on Si devices were grown, demonstrating the compelling advantages of this patterned Si template for a monolithic Si photonics integration platform.