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A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor
- Publication Year :
- 2018
-
Abstract
- We report a compact hybrid optical sensor by vertically integrating an a-Si:H photodiode and a low-temperature polysilicon (LTPS) thin-film transistor (TFT). Such a photodiode-gated LTPS TFT combines sensing, storage, and readout switch functions and also has an internal photoconductive gain, resulting in a one-transistor active pixel sensor intended for high-resolution and high-sensitivity large-area imaging. © 2018 IEEE.
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1125199387
- Document Type :
- Electronic Resource