Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

MLA

Hua, Mengyuan, et al. Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-Based MIS-HEMTs. 2015. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1125184246&authtype=sso&custid=ns315887.

APA

Hua, M., Liu, C., Yang, S., Liu, S., Fu, K., Dong, Z., Cai, Y., Zhang, B., & Chen, J. K. (2015). Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs.

Chicago

Hua, Mengyuan, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, and Jing Kevin Chen. 2015. “Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-Based MIS-HEMTs.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1125184246&authtype=sso&custid=ns315887.