ZnSTe-based visible-blind UV photovoltaic detectors

We have successfully fabricated Schottky photovoltaic detectors on ZnSTe epilayers grown by the molecular beam epitaxy technique on several commonly available substrates. The photoresponse of these detectors was measured using the Fourier transform interferometric technique. The response is shown to be sensitive to the type of substrate used, the conductivity type of the substrate, as well as the doping level of the active layer. Visible-blind UV-sensitive response is realized in an optimized device structure. An external quantum efficiency of over 50\% is achieved in a structure grown on a GaP substrate and over 40\% is achieved in one grown on a Si substrate. (C) 1998 Elsevier Science B.V. All rights reserved.