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Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3
- Source :
- Birck and NCN Publications
- Publication Year :
- 2012
-
Abstract
- From experiments on internal photoemission of electrons at the (100)InSb/Al2O3 interface, the top of the InSb valence band is found to be 3.05 +/- 0.10 eV below the oxide conduction band and corresponds to a conduction band offset of 2.9 +/- 0.1 eV. These results indicate that the top of valence band in InSb lies energetically at the same level as in GaSb and above the valence bands in InxGa1-xAs (0
Details
- Database :
- OAIster
- Journal :
- Birck and NCN Publications
- Notes :
- application/pdf
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1107614416
- Document Type :
- Electronic Resource