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Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3

Authors :
Chou, H.Y.
Afanas'ev, V. V.
Houssa, M.
Stesmans, A.
Dong, Lin
Ye, Peide
Chou, H.Y.
Afanas'ev, V. V.
Houssa, M.
Stesmans, A.
Dong, Lin
Ye, Peide
Source :
Birck and NCN Publications
Publication Year :
2012

Abstract

From experiments on internal photoemission of electrons at the (100)InSb/Al2O3 interface, the top of the InSb valence band is found to be 3.05 +/- 0.10 eV below the oxide conduction band and corresponds to a conduction band offset of 2.9 +/- 0.1 eV. These results indicate that the top of valence band in InSb lies energetically at the same level as in GaSb and above the valence bands in InxGa1-xAs (0

Details

Database :
OAIster
Journal :
Birck and NCN Publications
Notes :
application/pdf
Publication Type :
Electronic Resource
Accession number :
edsoai.on1107614416
Document Type :
Electronic Resource