Cite
Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy
MLA
Alén, Benito, et al. Formation and Emission Properties of Single InGaAs/GaAs Quantum Dots and Pairs Grown by Droplet Epitaxy. 2010. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1104762510&authtype=sso&custid=ns315887.
APA
Alén, B., Fuster, D., Muñoz-Matutano, G., Alonso-González, P., Canet-Ferrer, J., Martínez Pastor, J. P., Fernández-Martínez, I., Royo González, M., Climente, J. I., González Díez, Y., Briones Fernández-Pola, F., Molina, S. I., & González Sotos, L. (2010). Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy.
Chicago
Alén, Benito, David Fuster, G. Muñoz-Matutano, Pablo Alonso-González, J. Canet-Ferrer, Juan Pascual Martínez Pastor, Iván Fernández-Martínez, et al. 2010. “Formation and Emission Properties of Single InGaAs/GaAs Quantum Dots and Pairs Grown by Droplet Epitaxy.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1104762510&authtype=sso&custid=ns315887.