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Scanning x-ray excited optical luminescence microscopy in GaN
- Publication Year :
- 2006
-
Abstract
- In this work, an imaging tool to investigate optical inhomogeneities with site and chemical sensitivities has been integrated in a hard x-ray microprobe. Freestanding GaN and epitaxially grown GaN:Mn on -Al2O3 are used to exploit the unprecedented scanning x-ray excited luminescence technique. Optical images of the radiative recombination channels are reported for several impurities and defect centers in sapphire and GaN compounds. Within the experimental accuracy, a visible nonuniformity characterizes the Mn centers in good correlation with former x-ray fluorescence map. Expanding the microprobe versatility, x-ray absorption spectroscopy in both photon collection modes (x-ray excited luminescence and x-ray fluorescence) is finally presented from a freestanding GaN layer.
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1103351043
- Document Type :
- Electronic Resource