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Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording
- Publication Year :
- 2002
-
Abstract
- A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance ~EMR! effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a 300 K EMR of 6% and a current sensitivity of 147 V/T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.2.
Details
- Database :
- OAIster
- Notes :
- Solin, S. A. and Hines, D. R. and Rowe, A. C. H. and Tsai, Jaw-Shen and Pashkin, Yuri and Chung, S. J. and Goel, N. and Santos, M. (2002) Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording. Applied Physics Letters, 80 (21). pp. 4012-4014. ISSN 0003-6951
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1099169841
- Document Type :
- Electronic Resource