Comparison of Gamma Ray Effects on Eproms and (Eproms)-P-2

This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory ((EPROM)-P-2) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and (EPROM)-P-2 (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than (EPROMS)-P-2. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in (EPROMs)-P-2 are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.