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Influence of a gold seed in transparent V2Ox/Ag/V2Ox selective contacts for dopant-free silicon solar cells

Authors :
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Nguyen, Hieu Trung
Ros Costals, Eloi
Bertomeu Balaguero, Joan
Asensi López, José Miguel
Andreu Batallé, Jordi
Martín García, Isidro
Ortega Villasclaras, Pablo Rafael
Garin Escriva, Moises
Puigdollers i González, Joaquim
Voz Sánchez, Cristóbal
Alcubilla González, Ramón
Tom, Thomas
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Nguyen, Hieu Trung
Ros Costals, Eloi
Bertomeu Balaguero, Joan
Asensi López, José Miguel
Andreu Batallé, Jordi
Martín García, Isidro
Ortega Villasclaras, Pablo Rafael
Garin Escriva, Moises
Puigdollers i González, Joaquim
Voz Sánchez, Cristóbal
Alcubilla González, Ramón
Tom, Thomas
Publication Year :
2018

Abstract

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.<br />Dielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a tradeoff in the metal thickness to achieve high transparency and low sheet resistance simultaneously. It has been demonstrated that an ultra-thin gold seed prevents the tendency of silver to form clusters. This wetting effect reduces the metal thickness needed to form a continuous film, which leads to a higher averaged transmittance and very low sheet resistance. On the other hand, vanadium pentoxide on silicon forms a high-quality hole-selective contact. Thus, these structures can be used as an all-in-one transparent electrode and selective contact for a new kind of heterojunction solar cells. This concept has been proved in a 13.3% efficient solar cell fabricated on n-type silicon wafers. Besides being dopant-free, the complete fabrication route did not require any sputtered transparent electrode.<br />Peer Reviewed<br />Postprint (author's final draft)

Details

Database :
OAIster
Notes :
application/vnd.openxmlformats-officedocument.wordprocessingml.document, English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1073029585
Document Type :
Electronic Resource