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Current distribution effects in magnetoresistive tunnel junctions

Authors :
Veerdonk, van de, R.J.M.
Nowak, J.
Meservey, R.
Moodera, J.S.
Jonge, de, W.J.M.
Veerdonk, van de, R.J.M.
Nowak, J.
Meservey, R.
Moodera, J.S.
Jonge, de, W.J.M.
Source :
Applied Physics Letters vol.71 (1997) nr.19 p.2839-2841 [ISSN 0003-6951]
Publication Year :
1997

Abstract

The influence of an inhomogeneous current density on the (magneto)resistance of a ferromagnet–insulator–ferromagnet tunnel junction in the cross-strip geometry is analyzed using a finite element approach. The four-probe resistance is smaller than the actual resistance for electrode resistances (in the junction area) comparable to or higher than the junction resistance. Even negative four-probe resistances can be obtained. The apparent resistance change due to the junction magnetoresistive effect also decreases, but always remains positive. This results in unrealistically large apparent magnetoresistance ratios which can even approach infinity, which explains some recent experiments.

Details

Database :
OAIster
Journal :
Applied Physics Letters vol.71 (1997) nr.19 p.2839-2841 [ISSN 0003-6951]
Notes :
Veerdonk, van de, R.J.M.
Publication Type :
Electronic Resource
Accession number :
edsoai.on1028686257
Document Type :
Electronic Resource