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Theoretical efficiency limits of a 2 terminal dual junction step cell

Authors :
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Fitzgerald, Eugene A.
Milakovich, Tim
Bulsara, Mayank
Polyzoeva, Evelina Aleksandro
Hoyt, Judy L.
Hadi, Sabina Abdul
Nayfeh, Ammar
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Fitzgerald, Eugene A.
Milakovich, Tim
Bulsara, Mayank
Polyzoeva, Evelina Aleksandro
Hoyt, Judy L.
Hadi, Sabina Abdul
Nayfeh, Ammar
Source :
Fitzgerald
Publication Year :
2016

Abstract

In this paper we present theoretical analysis for upper efficiency limit of a novel 2 terminal dual junction stepcell. Results show that step cell design relaxes bandgap requirements for efficient tandem cell. While conventional tandem cell with optimized bandgap combination (1.64 / 0.96 eV) has the highest efficiency (45.78 %), the step-cell design provides significant efficiency improvement for cells with non-optimized bandgap values. Efficiency upper limit for Si based step-cell with top cell bandgap equal to 1.41 eV (~ GaAs), efficiency upper limit increases from ~21% in conventional tandem cell to 38.7% for optimized step-cell design. Step-cell design provides opportunity for wider selection of materials used in tandem solar cell applications.

Details

Database :
OAIster
Journal :
Fitzgerald
Notes :
application/pdf, en_US
Publication Type :
Electronic Resource
Accession number :
edsoai.on1018417242
Document Type :
Electronic Resource