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Observation of strain-relaxation-induced size effects in p-type Si/SiGe resonant-tunneling diodes

Observation of strain-relaxation-induced size effects in p-type Si/SiGe resonant-tunneling diodes

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1008816018
Document Type :
Electronic Resource