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Observation of strain-relaxation-induced size effects in p-type Si/SiGe resonant-tunneling diodes
Observation of strain-relaxation-induced size effects in p-type Si/SiGe resonant-tunneling diodes
- Publication Year :
- 1998
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1008816018
- Document Type :
- Electronic Resource