Back to Search Start Over

A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm

Authors :
Babaie, M. (author)
Kuo, F (author)
Chen, H (author)
Cho, L (author)
Jou, C. P. (author)
Hsueh, F. L. (author)
Shahmohammadi, M. (author)
Staszewski, R.B. (author)
Babaie, M. (author)
Kuo, F (author)
Chen, H (author)
Cho, L (author)
Jou, C. P. (author)
Hsueh, F. L. (author)
Shahmohammadi, M. (author)
Staszewski, R.B. (author)
Publication Year :
2016

Abstract

We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply voltage and power without sacrificing its startup margin. It also reduces 1/f noise and supply pushing, thus allowing the ADPLL, after settling, to reduce its sampling rate or shut it off entirely during a direct DCO data modulation. The switching power amplifier integrates its matching network while operating in class-E/F2 to maximally enhance its efficiency at low voltage. The transmitter is realized in 28 nm digital CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy mode.<br />Electronics

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1008787406
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.1109.JSSC.2016.2551738