Reaction sequence of thin Ni films with (001) 3C-SiC

Authors :: Gasser, S. M.
Bachli, A.
Kolawa, E.
Nicolet, M. A.
Gasser, S. M.
Bachli, A.
Kolawa, E.
Nicolet, M. A.
Publication Year :: 1998
Abstract: Nickel is frequently used as a contact to SiC. We investigate the reaction sequence between Ni and cubic SiC at annealing temperatures between 400°C and 700°C in vacuum.

Database :: OAIster
Notes :: application/pdf, Reaction sequence of thin Ni films with (001) 3C-SiC, English
Publication Type :: Electronic Resource
Accession number :: edsoai.ocn992583131
Document Type :: Electronic Resource