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A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system
- Publication Year :
- 2001
-
Abstract
- A bi-directional amplifier (BDA) utilizing the negative resistance of Heterojunction Interband Tunnel Diode (HITD) is proposed. Expected features of the BDA are: 1) symmetry and reciprocity of the associated scattering matrix; 2) gain at extremely low DC power consumption. These features make the circuits an enabling electronic function for RF identification tag. The BDA topology consisted of a pair of HITDs biased in the negative dynamic region (NDR) and a lumped element directional coupler with arbitrary impedance terminations. The design techniques along with an experimental validation are provided.
Details
- Database :
- OAIster
- Notes :
- Collodi, G., Deshpande, M., El-Zein, N., Manes, G., Nair, V.
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn979260939
- Document Type :
- Electronic Resource