Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots

MLA

Reyes, D. F., et al. “Effect of Annealing in the Sb and In Distribution of Type II GaAsSb-Capped InAs Quantum Dots.” Semiconductor Science and Technology, ISSN 0268-1242, 2015, Vol. 30, No. 11, 2015. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.ocn962158298&authtype=sso&custid=ns315887.

APA

Reyes, D. F., Ulloa Herrero, J. M., Fernández González, A. de G., Hierro Cano, A., Sales, D. L., Beanland, R., Sánchez, A. M., & González, D. (2015). Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots. Semiconductor Science and Technology, ISSN 0268-1242, 2015, Vol. 30, No. 11.

Chicago

Reyes, D.F., José María Ulloa Herrero, Álvaro de Guzmán Fernández González, Adrián Hierro Cano, D.L. Sales, R. Beanland, A.M. Sánchez, and D. González. 2015. “Effect of Annealing in the Sb and In Distribution of Type II GaAsSb-Capped InAs Quantum Dots.” Semiconductor Science and Technology, ISSN 0268-1242, 2015, Vol. 30, No. 11. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.ocn962158298&authtype=sso&custid=ns315887.