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SOIデバイスを用いた宇宙用半導体部品の開発
- Publication Year :
- 2015
-
Abstract
- This paper describes a brief overview and research results of ISAS/MHI (Mitsubishi Heavy Industries) space-application microelectronics development project. The collaboration between ISAS and MHI have been developing radiation hardened VLSI components with a 0.2-micrometer fully-depleted silicon-on-insulator technology, and provides them as basic design units called standard cells. Chip designers can create various types of radiation hardened VLSI (Very Large Scale Integration) chips optimized for space research missions by properly combining the standard cells as they design conventional VLSI chips. The collaboration has also established an economically-efficient chip fabrication system. In FY2005, high-performance circuits have been included in the ISAS/MHI standard cells to realize high-performance space-application-specific microelectronics like a radiation hardened microprocessor with its operating frequency exceeding 100 MHz.<br />JAXA Special Publication<br />宇宙航空研究開発機構特別資料
Details
- Database :
- OAIster
- Notes :
- Japanese
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn922352107
- Document Type :
- Electronic Resource