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Sealed wedge-shaped silicon power triode
- Publication Year :
- 1995
-
Abstract
- Sealed wedge-shaped silicon power triode have been fabricated by CMOS compatible technology. The fabricated field emitter has higher thermal and mechanical stability due to the Eiffel Tower shape. The sealed structure eliminates the needs for external vacuum pumping and improves the reliability and lifetime of the device. Anode current were demonstrated at anode voltage less than 4 volts.
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn905102580
- Document Type :
- Electronic Resource