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Valence and conduction band offsets of a ZrO 2 /SiO x N y /n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

Authors :
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA ; WILEY-VCH Verlag Berlin ; Department of Chemistry, Rutgers University, Piscataway, NJ 08854, USA Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA IBM T. J. Watson Research Center, Yorktown Heights, New York, USA Department of Chemistry, University of Michigan, Ann Arbor, MI 48109, USA
Department of Chemistry, University of Michigan, Ann Arbor, MI 48109, USA
Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
Department of Chemistry, Rutgers University, Piscataway, NJ 08854, USA
Sayan, S.
Bartynski, R. A.
Zhao, X.
Gusev, E. P.
Vanderbilt, D.
Croft, M.
Banaszak Holl, Mark M.
Garfunkel, E.
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA ; WILEY-VCH Verlag Berlin ; Department of Chemistry, Rutgers University, Piscataway, NJ 08854, USA Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA IBM T. J. Watson Research Center, Yorktown Heights, New York, USA Department of Chemistry, University of Michigan, Ann Arbor, MI 48109, USA
Department of Chemistry, University of Michigan, Ann Arbor, MI 48109, USA
Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
Department of Chemistry, Rutgers University, Piscataway, NJ 08854, USA
Sayan, S.
Bartynski, R. A.
Zhao, X.
Gusev, E. P.
Vanderbilt, D.
Croft, M.
Banaszak Holl, Mark M.
Garfunkel, E.
Publication Year :
2006

Abstract

The densities of states above and below the Fermi energy for the ZrO 2 /SiO x N y /n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO 2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. (?? 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Details

Database :
OAIster
Notes :
en_US
Publication Type :
Electronic Resource
Accession number :
edsoai.ocn894077400
Document Type :
Electronic Resource

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