Porous Si as a substrate material for RF passive integration

Authors :: RFHO ; Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; CNRS - Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS - Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG)
Microwave Lab ; UCL
G Nassiopoulou, A.
Hourdakis, E.
Sarafis, P.
Ferrari, P.
Issa, H.
Raskin, J.-P.
Roda Neuf, C.
Ali, K.B.
RFHO ; Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; CNRS - Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS - Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG)
Microwave Lab ; UCL
G Nassiopoulou, A.
Hourdakis, E.
Sarafis, P.
Ferrari, P.
Issa, H.
Raskin, J.-P.
Roda Neuf, C.
Ali, K.B.
Source :: 14th International Conference on Ultimate Integration on Silicon, ULIS2013; 14th International Conference on Ultimate Integration on Silicon, ULIS2013, Mar 2013, Warwick, United Kingdom. pp.1-4
Abstract: International audience

Database :: OAIster
Journal :: 14th International Conference on Ultimate Integration on Silicon, ULIS2013; 14th International Conference on Ultimate Integration on Silicon, ULIS2013, Mar 2013, Warwick, United Kingdom. pp.1-4
Notes :: Warwick, United Kingdom, 14th International Conference on Ultimate Integration on Silicon, ULIS2013, English
Publication Type :: Electronic Resource
Accession number :: edsoai.ocn893165467
Document Type :: Electronic Resource