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A low-power differential cross-coupled FET logic for GaAs asynchronous design
- Source :
- GAAS-96.-European-Gallium-Arsenide-and-Related-III-V-Compounds-Applications-Symposium-and-Associated-CAD-Workshop.; GAAS-96.-European-Gallium-Arsenide-and-Related-III-V-Compounds-Applications-Symposium-and-Associated-CAD-Workshop., Dec 1995, Paris, France. Conservatoire Natl. Arts et Metiers, Paris, France, pp.1-4
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Abstract
- This paper describes a new GaAs MESFET structure, differential cross-coupled FET logic (DC/sup 2/FL), which is compatible with DCFL, DPTL and DCVS circuits. It can be efficiently used in delay-insensitive asynchronous circuits and self-timed rings, as well as in synchronous ones. When combined with the aforementioned differential structures, it offers attractive power savings without performance degradation. As an example, a fully functional 8-bit ripple carry adder has been designed and fabricated, verifying the expected very low power dissipation during the standby state.
Details
- Database :
- OAIster
- Journal :
- GAAS-96.-European-Gallium-Arsenide-and-Related-III-V-Compounds-Applications-Symposium-and-Associated-CAD-Workshop.; GAAS-96.-European-Gallium-Arsenide-and-Related-III-V-Compounds-Applications-Symposium-and-Associated-CAD-Workshop., Dec 1995, Paris, France. Conservatoire Natl. Arts et Metiers, Paris, France, pp.1-4
- Notes :
- Paris, France, GAAS-96.-European-Gallium-Arsenide-and-Related-III-V-Compounds-Applications-Symposium-and-Associated-CAD-Workshop., English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn892987517
- Document Type :
- Electronic Resource