Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

Authors :: Nourbakhsh, Amirhasan
Cantoro, Mirco
Klekachev, A.
Clemente, Francesca
Sorée, B.
van der Veen, Marleen H.
Vosch, Tom
Stesmans, A.
Sels, Bert
De Gendt, Stefan
Nourbakhsh, Amirhasan
Cantoro, Mirco
Klekachev, A.
Clemente, Francesca
Sorée, B.
van der Veen, Marleen H.
Vosch, Tom
Stesmans, A.
Sels, Bert
De Gendt, Stefan
Source :: Nourbakhsh , A , Cantoro , M , Klekachev , A , Clemente , F , Sorée , B , van der Veen , M H , Vosch , T , Stesmans , A , Sels , B & De Gendt , S 2010 , ' Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing ' , Journal of Physical Chemistry C , vol. 114 , no. 15 , pp. 6894-6900 .
Publication Year :: 2010

Database :: OAIster
Journal :: Nourbakhsh , A , Cantoro , M , Klekachev , A , Clemente , F , Sorée , B , van der Veen , M H , Vosch , T , Stesmans , A , Sels , B & De Gendt , S 2010 , ' Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing ' , Journal of Physical Chemistry C , vol. 114 , no. 15 , pp. 6894-6900 .
Notes :: English
Publication Type :: Electronic Resource
Accession number :: edsoai.ocn889795426
Document Type :: Electronic Resource

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