Strained InGaAs/InAlAs Quantum Wells for Complementary III-V Transistors

Quantum wells of InGaAs clad by InAlAs were grown on AlGaAsSb buffer layers by molecular beam epitaxy. The buffer layer lattice parameters were near 6.0 , yielding tensile strains up to 2% in the InGaAs and InAlAs. Room-temperature electron mobilities of 9000-11,000 cm2/V s were achieved. Field-effect transistors (FETs) were fabricated and exhibited good DC and RF characteristics. Previous work demonstrated compressively-strained GaSb quantum wells on similar buffer layers with high hole mobilities and good transistor performance. Hence, a single buffer layer of AlGaAsSb should be suitable for complementary circuits comprised of n-channel FETs based on the mature InGaAs/InAlAs technology and p-channel FETs based on high-mobility antimonides.
Published in the Journal of Crystal Growth, v388 p92 97, 2014.