Challenges and Opportunities for InP HBT Mixed Signal Circuit Technology

Mixed signal circuits based on InP HBTs are being challenged for meeting DoD high bandwidth and dynamic range requirements by aggressively scaled SiGe bipolar technology. This paper presents the challenges that conventional mesa InP HBT technology must overcome (primarily scaling and integration complexity) to maintain its competitive advantage over the silicon alternative. Approaches to overcoming these challenges are identified.
Pres. at International Conference on Indium Phosphide and Related Materials (15th) held in Santa Barbara, CA on 12-16 May 2003. See also IEEE catalog no. 03CH37413. ISBN no. 0-7803-7704-4. ISSN no. 1092-8669. This article is from ADA420200 2003 International Conference on Indium Phosphide and Related Materials