Comparison of Hole and Electron Emission from InAs Quantum Dots

Carrier escape processes from self-organized InAs quantum dots (QDs) embedded in GaAs are investigated by time-resolved capacitance spectroscopy. Electron emission is found to be dominated by tunneling processes. In addition to tunneling from the ground state, we find thermally activated tunneling involving excited QD states with an activation energy of 82 meV. For boles, the tunnel contribution is negligible and thermal activation from the QD ground state to the GaAs valence band with an activation energy of 164 meV dominates. Extrapolation to room temperature yields an emission time constant of 5 ps for holes, which is an order of magnitude larger than for electrons. The measured activation energies agree well with theoretically predicted QD levels.
This article is from Nanostructures: Physics and Technology Intl Symposium (8th), p. 375-378 This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings