Steps Towards the Realization of Novel Prototype Functional Devices Using Scanning Probe Microscopy

Moore's principle predicts that beyond the year 2010 the typical structure dimensions of electronic memory devices will fall below 70 nm. Apart from the necessity to develop suitable lithographic techniques for mass production of sub 100 nm features, the sole reduction of the structure dimensions (top down approach), while maintaining the present day device architecture, will result in physical obstacles, making the invention of novel designs for future devices indispensable. It what follows, we report on novel concepts for the fabrication of a single-electron transistor (SET) and a quantum interference transistor (QUIT), respectively
Pres: 6th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 22-26 Jun 1998. p97-100. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings