Influence of Er and 0 Doses in Er-Related Emission in Al0.70Ga0.30As:Er

Er ions with doses ranging from 1 x 10(exp 13)/sq cm to 1 x 10(exp 15)/sq cm were implanted into A10.70Ga0.30As on GaAs substrates, at 800 deg C, Photoluminescence (PL) intensity of Er-related emission around 1.54 micrometers was enhanced by co-implanted oxygen (O). The optimum dose of Er ion was 1 x 10(exp 14)sq cm and 0 ion was 1 x 10(exp 15)/sq cm, respectively. Furthermore, from the temperature dependence of the PL intensity of sample implanted with the optimum dose, we estimated the values of E1, E2, and E3, the activation energies in order to investigate the rapid thermal quenching of Er ion in Al0.70Ga0.30As. We found that PL intensity of Er-related emission, in addition to O dose, was enhanced approximately twenty two times at room temperature. And from the temperature dependence of the lifetime of the optimum dose of Er and O, the value 245 meV of E(sub A), the activation energy for the decrease of the lifetime, was nearly equal to the value 235 meV of E2. Based on the result, the decrease of the lifetime confirms that the radiative efficiency is lower; therefore, we propose that rapid thermal quenching occurs at temperatures above 200 K due to the decrease of the radiative efficiency.
Pub in: Materials Research Society Symposium Proceedings, Volume 692. This article is from ADA405047 Progress in Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001.