Gallium Vacancy in GaSb Studied by Positron Lifetime Spectroscopy and p Photoluminescence

Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSb samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350 deg C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400 deg C annealing. Our results is consistent wide the general belief that the 777 meV transition is related to the V(sub Ga)Ga(sub sb) defect, which is the proposed residual acceptor of GaSb.
Pub in: Materials Research Society Symposium Proceedings, Volume 692. This article is from ADA405047 Progress in Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001.